Wednesday, September 28, 2016

IRFP9240 Power Mosfet

HEXFET® Power MOSFET

  • Packaging TO-247AC
  • Polarity P-Channel
  • Power dissipation 150W (@ Ta25 ° C)
  • Drain-source voltage VDS - 5 V
  • Drain-source breakdown voltage - 200 V (@ ID - 250μA)
  • Gate-source voltage of ± 20 V
  • Continuous drain current -12 A (@ Ta25 ° C)
  • Gate-source cutoff voltage 20 V
  • Barriers drain-source rds (on) 0:50 Ohm (ID-1mA)