HEXFET® Power MOSFET
- Packaging TO-247AC
- Polarity P-Channel
- Power dissipation 150W (@ Ta25 ° C)
- Drain-source voltage VDS - 5 V
- Drain-source breakdown voltage - 200 V (@ ID - 250μA)
- Gate-source voltage of ± 20 V
- Continuous drain current -12 A (@ Ta25 ° C)
- Gate-source cutoff voltage 20 V
- Barriers drain-source rds (on) 0:50 Ohm (ID-1mA)