IR2181PBF a CMOS driver IC technology for MOSFET and IGBT gate. IR2181PBF can be used to mendrive / control N-Channel power MOSFET and IGBT high-side configuration with a voltage up to 600 V.
specifications:
- Driver Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT and MOSFET N-Channel
- Voltage: 10-20 V
- Voltage Logic: 0.8 and 2.7 V
- Output Flow: 1.9 - 2.3a
- Input Type Non-Inverting
- High-Side Voltage: 600V
- Working temperature: -40 ° C - 150 ° C
- Packaging: 8-DIP
