H21A3 is a phototransistor that it contains an infrared diode phothotransistor gallium arsenide and silicon. Packaging on the phototransistor is also designed in a way to optimize the mechanical resolution, coupling efficiency, and rejection of light.
Specification:
- Sensing Range: 3 mm
- Sensing Method: Transmissive
- Output Configuration: Phototransistor
- Forward Voltage: 1.7 V
- Forward Flow: 50 mA
- Flow Collectors: 20 mA
- Collector-emitter breakdown voltage: 30 V
- Response Time: 8-150 uS
- Working temperature: -55 ° C - 100 ° C
