MG50Q2YS50 Silicon N Channel IGBT

Silicon N Channel IGBT by: TOSHIBA

specifications:
- Vces: 1200V (max)
- Vges: ± 20V
- Ic: 156a @ 1ms
- If: 100A @ 1ms
- Collector power dissipation (Pc): 400W (max rating)
- Isolation voltage: 2500V (max rating)
- Reverse recovery time: 0.25μ s