Fairchild, HGTG30N60C3D, IGBT Transistor N-channel, 63 A 600 V, 3-Pin TO-247
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specifications:
| Channel Type | N | |
| Configuration | Single | |
| Dimensions | 15.87 x 4.82 x 20.82mm | |
| Height | 20.82mm | |
| Length | 15.87mm | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Continuous Collector Current | 63 A | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Mounting Type | Through Hole | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Width | 4.82mm |
