Fuji 1MBH60-100 IGBT Module

Insulated Gate Bipolar Transistor Fuji 1MBH60-100 which has a fast switching capability, high impedance gate and a low saturation voltage.

specifications:
- Power dissipation: 260 W
- Vces: 1000 V (max)
- Vce (sat): 15 V
- Vges: +/- 20 V
- Ic: 60 A