IRF830L P-Channel MOSFET with a fairly fast switching capability and low resistance.
- Polarity P-Channel
- Power dissipation of 50 W
- Drain-source voltage VDS 500 V
- Drain-source breakdown voltage -
- Gate-source voltage +/- 20 V
- Continuous drain current 4.5 A
- Gate-source cutoff voltage 2-4 V
- Barriers to the drain-source rds (on) 1.5 Ohm
- Packaging TO-262-3 Long Leads
