2SJ494 an artificial power MOSFET VDS NEC with 60 V and VGS is 20 V. Power MOSFET gate protection diode technology include power MOSFET so that it can minimize the damage caused by ESD.
- Packaging TO-220
- Polarity P-Channel
- Power dissipation 2 W
- Drain-source voltage VDS 60 V
- Gate-source voltage 20 V
- Continuous drain current 20 A (max)
- Barriers drain-source rds (on) -1 ~ -2 V
