An RF-FET transistor that has a great reinforcement, high linearity and low distortion so that the components are widely used on mobile devices and wireless data system.
- The system works on a frequency of 450 MHz to 6 GHz.
- Packaging SOT-343 (4-pin)
- Power dissipation is 270 mW
- Drain-source voltage VDS 5V
- Gate-source voltage of 0.47 V
- Continuous drain current of 100 mA