IRF630N HEXFET® Power MOSFET

• Packaging TO-220AB
  
• Polarity N-Channel
• Power dissipation 82W
• Drain-source voltage VDS 1.3V
• Drain-source breakdown voltage of 200V
• Gate-source voltage of 20V ±
• Continuous drain current 9.3A (@ VGS10V Tc25 ° C)
• Gate-source cutoff voltage of 2.0V-4.0V (@ID 250μA)
• Barriers drain-source rds (on) 0.30O