Tuesday, February 10, 2015

HGTG30N60C3D IGBT Transistor N Channel

Fairchild, HGTG30N60C3D, IGBT Transistor N-channel, 63 A 600 V, 3-Pin TO-247

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Channel TypeN
Dimensions15.87 x 4.82 x 20.82mm
Maximum Collector Emitter Voltage600 V
Maximum Continuous Collector Current63 A
Maximum Gate Emitter Voltage±20V
Maximum Operating Temperature+150 °C
Minimum Operating Temperature-40 °C
Mounting TypeThrough Hole
Package TypeTO-247
Pin Count3