NTE2322 chip

General purpose quad PNP silicon transistor.
Specification:
- Vceo: 40V, Vcbo: 60V, VEBO: 5V.
- Ic: 600mA.
- PD per transistor: 0,65W.
- Hfe: min. 30.
- Vce (sat): max.1,6 V.
- Vbe (sat): max. 2,6V.
- Package: 14-pin DIP 0,3inch.