Thursday, April 20, 2017

FDV303N Mosfet

FDV303N an N-Channel MOSFET with drain-source voltage (Vds) 25 V, the drain current (Id) 680 mA and 350 mW power dissipation.



  • Packaging SOT-23
  • N-Channel Polarity
  • Power dissipation 350 mW
  • Drain source voltage vds 25 V
  • Drain source breakdown voltage 25 V
  • Gate-source voltage 8 V
  • Continuous drain current 680 mA